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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

In0.53Ga0.47As RTD-MOSFET Millimeter-Wave Wavelet Generator

Author

  • Mikael Egard
  • Mats Ärlelid
  • Lars Ohlsson
  • Mattias Borg
  • Erik Lind
  • Lars-Erik Wernersson

Summary, in English

We report on the fabrication of a self-aligned regrown In0.53Ga0.47As metal-oxide-semiconductor field-effect transistor (MOSFET) and a resonant tunneling diode (RTD). The performance of these devices is demonstrated by integrating them in parallel with an inductive coplanar waveguide stub to form a highly energy-efficient 70-GHz wavelet generator. The fast switching and low on-resistance of the MOSFET make it possible to kick-start and rapidly quench this RTD-driven oscillator circuit, which produces 41-ps-short wavelets at 15 Gpulses/s, a peak output power of 7 dBm, and an energy consumption of 1.9 pJ/pulse.

Department/s

  • Solid State Physics
  • Department of Electrical and Information Technology
  • NanoLund

Publishing year

2012

Language

English

Pages

970-972

Publication/Series

IEEE Electron Device Letters

Volume

33

Issue

7

Document type

Journal article

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Keywords

  • generator
  • pulse
  • metal-oxide-semiconductor field-effect transistor (MOSFET)
  • metal-organic chemical vapor deposition regrowth
  • Impulse radio
  • InGaAs
  • resonant tunneling diode (RTD)
  • ultrawideband
  • wavelet

Status

Published

ISBN/ISSN/Other

  • ISSN: 0741-3106