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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Mobility of near surface MOVPE grown InGaAs/InP quantum wells

Author

  • Lasse Södergren
  • Navya Sri Garigapati
  • Mattias Borg
  • Erik Lind

Summary, in English

In this work, we study the electron mobility of near surface metal organic vapor phase epitaxy-grown InGaAs quantum wells. We utilize Hall mobility measurements in conjunction with simulations to quantify the surface charge defect density. Buried quantum wells are limited by polar optical phonon scattering at room temperature. In contrast, the quantum wells directly at the surface are limited by remote charge impurity scattering from defects situated at the III-V/oxide interface or inside the oxide, showing a mobility of 1500 cm2/V s. Passivating the InGaAs surface by depositing an oxide reduces the amount of defects at the interface, increasing the mobility to 2600 cm2/V s.

Department/s

  • Nano Electronics
  • NanoLund

Publishing year

2020-07-06

Language

English

Publication/Series

Applied Physics Letters

Volume

117

Issue

1

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Nano Technology

Status

Published

Research group

  • Nano Electronics

ISBN/ISSN/Other

  • ISSN: 0003-6951