Your browser has javascript turned off or blocked. This will lead to some parts of our website to not work properly or at all. Turn on javascript for best performance.

The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here:

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Low temperature scanning tunneling microscopy and spectroscopy on laterally grown InxGa1-xAs nanowire devices


  • Yen Po Liu
  • Lasse Södergren
  • S. Fatemeh Mousavi
  • Yi Liu
  • Fredrik Lindelöw
  • Erik Lind
  • Rainer Timm
  • Anders Mikkelsen

Summary, in English

Laterally grown InxGa1-xAs nanowires (NWs) are promising candidates for radio frequency and quantum computing applications, which, however, can require atomic scale surface and interface control. This is challenging to obtain, not least due to ambient air exposure between fabrication steps, which induces surface oxidation. The geometric and electronic surface structures of InxGa1-xAs NWs and contacts, which were grown directly in a planar configuration, exposed to air, and then subsequently cleaned using atomic hydrogen, are studied using low-temperature scanning tunneling microscopy and spectroscopy (STM/S). Atomically flat facets witha root mean square roughness of 0.12 nm and the InGaAs (001) 4 × 2 surface reconstruction areobserved on the top facet of the NWs and the contacts. STS shows a surface bandgap variation of 30 meV from the middle to the end of the NWs, which is attributed to a compositional variation of the In/Ga element concentration. The well-defined facets and small bandgap variations found after area selective growth and atomic hydrogen cleaning are a good starting point for achieving high-quality interfaces during further processing.


  • Synchrotron Radiation Research
  • NanoLund
  • Nano Electronics

Publishing year





Applied Physics Letters





Document type

Journal article


American Institute of Physics (AIP)


  • Condensed Matter Physics
  • Nano Technology



Research group

  • Nano Electronics


  • ISSN: 0003-6951