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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

III-V Heterostructure Nanowire Tunnel FETs

Author

  • Erik Lind
  • Elvedin Memisevic
  • Anil Dey
  • Lars-Erik Wernersson

Summary, in English

In this paper, InAs/GaSb nanowire tunnel field-effect transistors (TFETs) are studied theoretically and experimentally. A 2-band 1-D analytic tunneling model is used to calculate the on- and off-current levels of nanowire TFETs with staggered source/channel band alignment. Experimental results from lateral InAs/GaSb are shown, as well as first results on integration of vertical InAs/GaSb nanowire TFETs on Si substrates.

Department/s

  • Nano Electronics
  • Department of Electrical and Information Technology

Publishing year

2015

Language

English

Pages

96-102

Publication/Series

IEEE Journal of the Electron Devices Society

Volume

3

Issue

3

Document type

Journal article

Publisher

Institute of Electrical and Electronics Engineers Inc.

Topic

  • Other Electrical Engineering, Electronic Engineering, Information Engineering

Status

Published

Research group

  • Nano Electronics

ISBN/ISSN/Other

  • ISSN: 2168-6734