Your browser has javascript turned off or blocked. This will lead to some parts of our website to not work properly or at all. Turn on javascript for best performance.

The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here:

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Weyl Semi-Metal-Based High-Frequency Amplifiers


  • A. Toniato
  • B. Gotsmann
  • E. Lind
  • C. B. Zota

Summary, in English

In this work, we propose and simulate a novel amplifier based on Weyl semi-metals, e.g. WP2 and MoP2. These topological materials have been shown to exhibit extremely large magnetoresistance at cryogenic conditions. In the proposed device, a gate current induces a local magnetic field which controls the resistivity of the Weyl semi-metal channel and the resulting output current. Simulations of the magnetic fields are performed to optimize the device design, as well as thermal modeling to determine self-heating effects. Device operation is simulated using an analytical 3D model of magnetic fields and resistivity, and a small-signal model. Results show that the proposed device can provide high gain (20-30 dB) with extremely low DC power dissipation (40 μW) and high transition frequencies. This type of device is promising to replace HEMTs in quantum computers, where the low power dissipation enables it to be integrated at lower cryostat temperature stages.


  • Nano Electronics
  • NanoLund

Publishing year





Technical Digest - International Electron Devices Meeting, IEDM



Document type

Conference paper


Institute of Electrical and Electronics Engineers Inc.


  • Other Electrical Engineering, Electronic Engineering, Information Engineering

Conference name

65th Annual IEEE International Electron Devices Meeting, IEDM 2019

Conference date

2019-12-07 - 2019-12-11

Conference place

San Francisco, United States



Research group

  • Nano Electronics


  • ISSN: 2156-017X
  • ISSN: 0163-1918
  • ISBN: 9781728140315
  • ISBN: 978-1-7281-4033-9