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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Uniform and position-controlled InAs nanowires on 2('') Si substrates for transistor applications.


  • Sepideh Gorji
  • Sofia Johansson
  • Mattias Borg
  • Erik Lind
  • Kimberly Dick Thelander
  • Lars-Erik Wernersson

Summary, in English

This study presents a novel approach for indirect integration of InAs nanowires on 2('') Si substrates. We have investigated and developed epitaxial growth of InAs nanowires on 2('') Si substrates via the introduction of a thin yet high-quality InAs epitaxial layer grown by metalorganic vapor phase epitaxy. We demonstrate well-aligned nanowire growth including precise position and diameter control across the full wafer using very thin epitaxial layers (<300 nm). Statistical analysis results performed on the grown nanowires across the 2('') wafer size verifies our full control on the grown nanowire with 100% growth yield. From the crystallographic viewpoint, these InAs nanowires are predominantly of wurtzite structure. Furthermore, we show one possible device application of the aforementioned structure in vertical wrap-gated field-effect transistor geometry. The vertically aligned InAs nanowires are utilized as transistor channels and the InAs epitaxial layer is employed as the source contact. A high uniformity of the device characteristics for numerous transistors is further presented and RF characterization of these devices demonstrates an f(t) of 9.8 GHz.


  • Solid State Physics
  • Department of Electrical and Information Technology
  • NanoLund

Publishing year










Document type

Journal article


IOP Publishing


  • Nano Technology



Research group

  • Nano


  • ISSN: 0957-4484