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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Design of RF Properties for Vertical Nanowire MOSFETs

Author

  • Erik Lind
  • Lars-Erik Wernersson

Summary, in English

The RF performance of vertical nanowire metal-oxide-semiconductor field-effect transistors in realistic layouts has been calculated. The parasitic capacitances have been evaluated using full 3-D finite-element method calculations, combined with self-consistent Schrodinger-Poisson calculations for the intrinsic gate capacitances. It is shown that a performance comparable to planar FETs can be achieved in the vertical geometry by scaling the nanowire diameter and the wire-to-wire separation.

Department/s

  • Department of Electrical and Information Technology
  • Solid State Physics
  • NanoLund

Publishing year

2011

Language

English

Pages

668-673

Publication/Series

IEEE Transactions on Nanotechnology

Volume

10

Issue

4

Document type

Journal article

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • Field-effect transistors
  • InAs
  • metal-oxide-semiconductor field-effect
  • transistor (MOSFET)
  • modeling
  • nanowire
  • parasitic capacitance

Status

Published

Research group

  • Nano

ISBN/ISSN/Other

  • ISSN: 1536-125X