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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

First InGaAs lateral nanowire MOSFET RF noise measurements and model

Author

  • Lars Ohlsson
  • Fredrik Lindelow
  • Cezar B. Zota
  • Matthias Ohlrogge
  • Thomas Merkle
  • Lars Erik Wernersson
  • Erik Lind

Summary, in English

The first radio frequency (RF) noise measurements on lateral nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs) and a noise model are presented. We have characterized the RF noise and scattering parameters of an indium gallium arsenide (InGaAs) device. A fitted model yields extrapolated ft = 316 GHz current gain cutoff and fmax = 166 GHz maximum oscillation frequency. This device technology is being developed for millimeter wave circuit implementations, targeting a 94 GHz carrier frequency. The modeled intrinsic Fmin < 1dB minimum noise figure obtained promises performance at the target band, given reduction of gate parasitics. In any wireless system, noise and bandwidth limits the performance. Understanding of RF noise in nanowire MOSFET devices is thereby key for realization of future radar and communications systems.

Department/s

  • Nano Electronics

Publishing year

2017-08-01

Language

English

Publication/Series

75th Annual Device Research Conference, DRC 2017

Document type

Conference paper

Publisher

Institute of Electrical and Electronics Engineers Inc.

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering

Conference name

75th Annual Device Research Conference, DRC 2017

Conference date

2017-06-25 - 2017-06-28

Conference place

South Bend, United States

Status

Published

Research group

  • Nano Electronics

ISBN/ISSN/Other

  • ISBN: 9781509063277