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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Band Structure Effects on the Scaling Properties of [111] InAs Nanowire MOSFETs

Author

  • Erik Lind
  • Martin Persson
  • Yann-Michel Niquet
  • Lars-Erik Wernersson

Summary, in English

We have investigated the scaling properties of [111] InAs nanowire MOSFETs in the ballistic limit. The nanowire band structure has been calculated with an Sp(3)d(5)s* tight-binding model for nanowire diameters between 2 and 25 nm. Both the effective band gap and the effective masses increase with confinement. Using the atomistic dispersion relations, the ballistic currents and corresponding capacitances have been calculated with a semianalytical model. It is shown that the InAs nanowire MOSFET with diameters scaled below 15-20 nm can be expected to operate close to the quantum capacitance limit, assuming a high-kappa dielectric thickness of 1-1.5 nm. We have also investigated the evolution of f (t) and the gate delay, both showing improvements as the device is scaled. The very small intrinsic gate capacitance in the quantum limit makes the device susceptible to parasitic capacitances.

Department/s

  • Department of Electrical and Information Technology
  • Solid State Physics

Publishing year

2009

Language

English

Pages

201-205

Publication/Series

IEEE Transactions on Electron Devices

Volume

56

Issue

2

Document type

Journal article

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • Band structure
  • field-effect transistor (FET)
  • InAs
  • nanowire

Status

Published

Research group

  • Nano

ISBN/ISSN/Other

  • ISSN: 0018-9383