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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade


  • Elvedin Memisevic
  • Markus Hellenbrand
  • Erik Lind
  • Axel Persson
  • Saurabh Sant
  • Andreas Schenk
  • Johannes Svensson
  • Reine Wallenberg
  • Lars-Erik Wernersson

Summary, in English

Tunneling field-effect transistors (TunnelFET), a leading steep-slope transistor candidate, is still plagued by defect response, and there is a large discrepancy between measured and simulated device performance. In this work, highly scaled InAs/InxGa1−xAsySb1‑y/GaSb vertical nanowire TunnelFET with ability to operate well below 60 mV/decade at technically relevant currents are fabricated and characterized. The structure, composition, and strain is characterized using
transmission electron microscopy with emphasis on the heterojunction. Using Technology Computer Aided Design (TCAD) simulations and Random Telegraph Signal (RTS) noise measurements, effects of different type of defects are studied. The study reveals that the bulk defects have the largest impact on the performance of these devices, although for these highly scaled devices interaction with even few oxide defects can have large impact on the performance. Understanding the contribution by individual defects, as outlined in this letter, is essential to verify the fundamental physics of device operation, and thus imperative for taking the III−V TunnelFETs to the next level.


  • Nano Electronics
  • Department of Electrical and Information Technology
  • Centre for Analysis and Synthesis
  • NanoLund

Publishing year





Nano Letters

Document type

Journal article (letter)


The American Chemical Society (ACS)


  • Nano Technology


  • TFET
  • nanowire
  • InAs
  • GaSb
  • InGaAsSb



Research group

  • Nano Electronics


  • ISSN: 1530-6992