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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

High Current Density InAsSb/GaSb Tunnel Field Effect Transistors


  • Anil Dey
  • Mattias Borg
  • Bahram Ganjipour
  • Martin Ek
  • Kimberly Dick Thelander
  • Erik Lind
  • Peter Nilsson
  • Claes Thelander
  • Lars-Erik Wernersson

Summary, in English

Steep-slope devices, such as tunnel field-effect transistors (TFETs), have recently gained interest

due to their potential for low power operation at room temperature. The devices are based on inter-band

tunneling which could limit the on-current since the charge carriers must tunnel through a barrier to traverse

the device. The InAs/GaSb heterostructure forms a broken type II band alignment which enables inter-band

tunneling without a barrier, allowing high on-currents. We have recently demonstrated high current density

(Ion,reverse = 17.5 mA/µm) nanowire Esaki diodes and in this work we investigate the potential of InAs/GaSb

heterostructure nanowires to operate as TFETs. We present device characterization of InAs 0.85 Sb 0.15 /GaSb

nanowire TFETs, which exhibit record-high on-current levels.


  • Department of Electrical and Information Technology
  • Solid State Physics
  • Centre for Analysis and Synthesis
  • NanoLund

Publishing year







Device research conference

Document type

Conference paper


IEEE - Institute of Electrical and Electronics Engineers Inc.


  • Electrical Engineering, Electronic Engineering, Information Engineering


  • Tunneling Field-Effect Transistors
  • Broken gap
  • InAs
  • GaSb

Conference name

70th Annual Device Research Conference (DRC)

Conference date





  • ISSN: 1548-3770