Your browser has javascript turned off or blocked. This will lead to some parts of our website to not work properly or at all. Turn on javascript for best performance.

The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

High Current Density InAsSb/GaSb Tunnel Field Effect Transistors

Author

  • Anil Dey
  • Mattias Borg
  • Bahram Ganjipour
  • Martin Ek
  • Kimberly Dick Thelander
  • Erik Lind
  • Peter Nilsson
  • Claes Thelander
  • Lars-Erik Wernersson

Summary, in English

Steep-slope devices, such as tunnel field-effect transistors (TFETs), have recently gained interest

due to their potential for low power operation at room temperature. The devices are based on inter-band

tunneling which could limit the on-current since the charge carriers must tunnel through a barrier to traverse

the device. The InAs/GaSb heterostructure forms a broken type II band alignment which enables inter-band

tunneling without a barrier, allowing high on-currents. We have recently demonstrated high current density

(Ion,reverse = 17.5 mA/µm) nanowire Esaki diodes and in this work we investigate the potential of InAs/GaSb

heterostructure nanowires to operate as TFETs. We present device characterization of InAs 0.85 Sb 0.15 /GaSb

nanowire TFETs, which exhibit record-high on-current levels.

Department/s

  • Department of Electrical and Information Technology
  • Solid State Physics
  • Centre for Analysis and Synthesis
  • NanoLund

Publishing year

2012

Language

English

Pages

205-206

Publication/Series

Device research conference

Document type

Conference paper

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • Tunneling Field-Effect Transistors
  • Broken gap
  • InAs
  • GaSb

Conference name

70th Annual Device Research Conference (DRC)

Conference date

2012-06-18

Status

Published

ISBN/ISSN/Other

  • ISSN: 1548-3770