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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

InAs/GaSb vertical nanowire TFETs on Si for digital and analogue applications

Author

  • Elvedin Memisevic
  • J. Svensson
  • E. Lind
  • L. E. Wernersson

Summary, in English

Vertical InAs/GaSb nanowire TFETs with diameters of 20 nm and 25 nm have been fabricated and characterized. The influence of diameter, gate-placement, and nanowire numbers have been studied. The best device shows a subthreshold swing of 68 mV/dec at VDS = 0.3 V and 26 μA/μm at VDS = 0.3 V and VGS = 0.5 V. It achieves a self-gain larger than 100 with high transconductance efficiency.

Department/s

  • Department of Electrical and Information Technology
  • NanoLund

Publishing year

2016-09-27

Language

English

Pages

154-155

Publication/Series

2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016

Document type

Conference paper

Publisher

Institute of Electrical and Electronics Engineers Inc.

Topic

  • Other Electrical Engineering, Electronic Engineering, Information Engineering

Conference name

21st IEEE Silicon Nanoelectronics Workshop, SNW 2016

Conference date

2016-06-12 - 2016-06-13

Conference place

Honolulu, United States

Status

Published

ISBN/ISSN/Other

  • ISBN: 9781509007264