InAs/GaSb vertical nanowire TFETs on Si for digital and analogue applications
Summary, in English
Vertical InAs/GaSb nanowire TFETs with diameters of 20 nm and 25 nm have been fabricated and characterized. The influence of diameter, gate-placement, and nanowire numbers have been studied. The best device shows a subthreshold swing of 68 mV/dec at VDS = 0.3 V and 26 μA/μm at VDS = 0.3 V and VGS = 0.5 V. It achieves a self-gain larger than 100 with high transconductance efficiency.
- Department of Electrical and Information Technology
2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016
Institute of Electrical and Electronics Engineers Inc.
- Other Electrical Engineering, Electronic Engineering, Information Engineering
21st IEEE Silicon Nanoelectronics Workshop, SNW 2016
2016-06-12 - 2016-06-13
Honolulu, United States
- ISBN: 9781509007264