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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

RF reliability of gate last InGaAs nMOSFETs with high-k dielectric

Author

  • Guntrade Roll
  • Mikael Egard
  • Sofia Johannson
  • Lars Ohlsson
  • Lars Erik Wernersson
  • Erik Lind

Summary, in English

A complete reliability study of the high-frequency characteristics for nMOSFETs on InGaAs channel with Al2O3/HfO2 gate dielectric is presented. DC gate voltage stress causes an increase in the transconductance frequency dispersion. Stress induced border traps degrade the maximum DC-transconductance, but do not react at high frequencies. The main degradation characteristics of the high-frequency measurements can be modeled by the threshold voltage related transconductance shift. The maximum of the cut-off frequency is shifted with stress to higher or lower gate biases, but not decreased.

Department/s

  • Department of Electrical and Information Technology

Publishing year

2013-01-01

Language

English

Pages

38-41

Publication/Series

2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013

Document type

Conference paper

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Other Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • high-k
  • InGaAs
  • MOSFET
  • reliability
  • RF

Conference name

2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013

Conference date

2013-10-13 - 2013-10-17

Conference place

South Lake Tahoe, CA, United States

Status

Published

ISBN/ISSN/Other

  • ISBN: 9781479903504