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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

III-V nanowire MOSFETs with novel self-limiting Λ-ridge spacers for RF applications

Author

  • Fredrik Lindelöw
  • Navya Sri Garigapati
  • Lasse Södergren
  • Mattias Borg
  • Erik Lind

Summary, in English

We present a semi self-aligned processing scheme for III-V nanowire transistors with novel semiconductor spacers in the shape of Λ-ridges, utilising the effect of slow growth rate on {111}B facets. The addition of spacers relaxes the constraint on the perfect alignment of gate to contact areas to enable low overlap capacitances. The spacers give a field-plate effect that also helps reduce off-state and output conductance while increasing breakdown voltage. Microwave compatible devices with L g = 32 nm showing f T = 75 GHz and f max = 100 GHz are realized with the process, demonstrating matched performance to spacer-less devices but with relaxed scaling requirements.

Department/s

  • Nano Electronics
  • NanoLund

Publishing year

2020-06-01

Language

English

Publication/Series

Semiconductor Science and Technology

Volume

35

Issue

6

Document type

Journal article

Publisher

IOP Publishing

Topic

  • Telecommunications

Keywords

  • InGaAs
  • InP
  • metal-oxide-semiconductor field-effect transistor
  • nanowire
  • radio-frequency
  • spacers

Status

Published

Research group

  • Nano Electronics

ISBN/ISSN/Other

  • ISSN: 0268-1242