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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Vertical nanowire TFETs with channel diameter down to 10 nm and point S MIN of 35 mV/decade

Author

  • Elvedin Memisevic
  • Johannes Svensson
  • Erik Lind
  • Lars Erik Wernersson

Summary, in English

We present experimental data from vertical InAs/InGaAsSb/GaSb nanowire tunnel field-effect transistors with channel diameter scaled down to 10 nm and ability to reach a point subthreshold swing of 35 mV/decade at VDS = 0.05 V. Furthermore, the impact of drain, channel and source diameter scaling on the subthreshold swing and currents are studied. Impact of gate-overlap is more evident for devices with highly scaled source due to strong reduction of the current. Furthermore, small channel diameter makes these devices more susceptible to Random Telegraph Signal noise.

Department/s

  • Nano Electronics
  • NanoLund

Publishing year

2018-07

Language

English

Pages

1089-1091

Publication/Series

IEEE Electron Device Letters

Volume

39

Issue

7

Document type

Journal article

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Nano Technology

Keywords

  • GaSb
  • Heterojunctions
  • III-V
  • InAs
  • InGaAsSb
  • Logic gates
  • Nanoscale devices
  • Resistance
  • RTS
  • steep-slope
  • TFET
  • TFETs
  • Vertical Nanowires

Status

Published

Research group

  • Nano Electronics

ISBN/ISSN/Other

  • ISSN: 0741-3106