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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

High Frequency Performance of Vertical InAs Nanowire MOSFET


  • Erik Lind
  • Mikael Egard
  • Sofia Johansson
  • Anne-Charlotte Johansson
  • Mattias Borg
  • Claes Thelander
  • Karl-Magnus Persson
  • Anil Dey
  • Lars-Erik Wernersson

Summary, in English

We report on RF characterization of vertical, 100-nm-gate length InAs nanowire MOSFETs, utilizing wrap-gate technology and Al2O3 high-kappa gate oxide. The transistors show f(t)=5.6 GHz and f(max)=22 GHz, mainly limited by parasitic capacitances. The RF device performance is described using a hybrid-pi model taking hole generation at the drain into account. Electrostatic modeling of the parasitic capacitances for arrays of vertical nanowires indicates that a strong reduction in extrinsic capacitances can be achieved for devices with a small inter-wire separation.


  • Department of Electrical and Information Technology
  • Solid State Physics

Publishing year





2010 22Nd International Conference On Indium Phosphide And Related Materials (Iprm)

Document type

Conference paper


IEEE - Institute of Electrical and Electronics Engineers Inc.


  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering

Conference name

22nd International Conference on Indium Phosphide and Related Materials

Conference date

2010-05-31 - 2010-06-04



Research group

  • Analog RF
  • Digital ASIC
  • Nano


  • ISSN: 1092-8669
  • ISBN: 978-1-4244-5919-3