Your browser has javascript turned off or blocked. This will lead to some parts of our website to not work properly or at all. Turn on javascript for best performance.

The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

15 nm diameter InAs nanowire MOSFETs

Author

  • Anil Dey
  • Claes Thelander
  • Magnus Borgström
  • Mattias Borg
  • Erik Lind
  • Lars-Erik Wernersson

Summary, in English

InAs is an attractive channel material for III–V nanowire MOSFETs and early prototype high performance nanowire transistors have been demonstrated1. As the gate length is reduced, the nanowire diameter must be scaled quite aggressively in order to suppress short-channel effects2. However, a reduction in transconductance (gm) and drive current (ION) could be expected due to increased surface scattering for thin wires. We present data for the device properties of thin InAs nanowires, with diameters in the 15 nm range, and investigate possible improvements of the performance focusing on transistor applications. In order to boost ION, the source and drain resistance need to be reduced. Several doping sources were therefore evaluated in the study, among them selenium (Se), tin (Sn) and sulphur (S) to form n-i-n structures. We report very high current densities, up to 33 MA/cm2, comparable to modern HEMTs3, and a normalized transconductance of 1.8 S/mm for a nanowire with an intrinsic segment of nominally 150 nm and a diameter of 15 nm.

Department/s

  • Department of Electrical and Information Technology
  • Solid State Physics
  • NanoLund

Publishing year

2011

Language

English

Pages

21-22

Publication/Series

[Host publication title missing]

Document type

Conference paper

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Conference name

Device Research Conference (DRC), 2011 69th Annual

Conference date

2011-06-20

Conference place

Santa Barbara, CA, United States

Status

Published

Research group

  • Nano
  • Digital ASIC

ISBN/ISSN/Other

  • ISSN: 1548-3770