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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

High-frequency InGaAs tri-gate MOSFETs with fmax of 400 GHz

Author

  • C. B. Zota
  • F. Lindelöw
  • L. E. Wernersson
  • E. Lind

Summary, in English

Extremely scaled down tri-gate RF metal-oxide-semiconductor field-effect transistors (MOSFETs) utilising lateral nanowires as the channel, with gate length and nanowire width both of 20 nm are reported. These devices exhibit simultaneous extrapolated ft and fmax of 275 and 400 GHz at VDS = 0.5 V, which is the largest combined ft and fmax, as well as the largest fmax reported for all III-V MOSFETs.

Department/s

  • Department of Electrical and Information Technology
  • NanoLund

Publishing year

2016-10-27

Language

English

Pages

1869-1871

Publication/Series

Electronics Letters

Volume

52

Issue

22

Document type

Journal article

Publisher

IEE

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering

Status

Published

ISBN/ISSN/Other

  • ISSN: 0013-5194