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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates

Author

  • Jun Wu
  • Erik Lind
  • Rainer Timm
  • Martin Hjort
  • Anders Mikkelsen
  • Lars-Erik Wernersson

Summary, in English

The influence of InAs orientations and high-k oxide deposition conditions on the electrical and

structural quality of Au/W/Al2O3/InAs metal-oxide-semiconductor capacitors was investigated

using capacitance-voltage (C-V) and x-ray photoemission spectroscopy techniques. The results

suggest that the interface traps around the conduction band edge are correlated to the As-oxide

amount, while less to those of As-As bonds and In-oxides. The quality of the deposited Al oxide

determines the border trap density, hence the capacitance frequency dispersion. The comparison of

different processing conditions is discussed, favoring a 350 C high-k oxide deposition on (111)B

substrates followed by an annealing procedure at 400 oC.

Department/s

  • Department of Electrical and Information Technology
  • Synchrotron Radiation Research

Publishing year

2012

Language

English

Pages

3-132905

Publication/Series

Applied Physics Letters

Volume

100

Issue

13

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Atom and Molecular Physics and Optics
  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • Interface
  • InAs
  • High k
  • MOS capacitors

Status

Published

Research group

  • Nano
  • Synch Rad Res

ISBN/ISSN/Other

  • ISSN: 0003-6951