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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Performance Evaluation of III–V Nanowire Transistors

Author

  • Kristofer Jansson
  • Erik Lind
  • Lars-Erik Wernersson

Summary, in English

III–V nanowire (NW) transistors are an emerging technology with the prospect of high performance and low power dissipation. Performance evaluations of these devices, however, have focused mostly on the intrinsic properties of the NW, excluding any parasitic elements. In this paper, a III–V NW transistor architecture is investigated, based on a NW array with a realistic footprint. Based on scaling rules for the structural parameters, 3-D representations of the transistor are generated, and the parasitic capacitances are calculated. A complete optimization of the structure is performed based on the RF performance metrics fT and fmax, employing intrinsic transistor data combined with calculated parasitic capacitances and resistances. The result is a roadmap of optimized transistor structures for a set of technology nodes, with gate lengths down to the 10-nm-length scale. For each technology node, the performance is predicted, promising operation in the terahertz regime. The resulting roadmap has implications as a reference both for benchmarking and for device fabrication.

Department/s

  • Department of Electrical and Information Technology
  • NanoLund

Publishing year

2012

Language

English

Pages

2375-2382

Publication/Series

IEEE Transactions on Electron Devices

Volume

59

Issue

9

Document type

Journal article

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • Capacitance
  • Electrodes
  • Logic gates
  • Nanowires
  • Performance evaluation
  • Transistors
  • Field-effect transistor (FET)
  • InAs
  • modeling
  • nanowires (NWs)
  • roadmap

Status

Published

Project

  • EIT_WWW Wireless with Wires

Research group

  • Nano

ISBN/ISSN/Other

  • ISSN: 0018-9383