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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

20 GHz gated tunnel diode based UWB pulse generator


  • Mikael Egard
  • Mats Ärlelid
  • Erik Lind
  • Gvidas Astromskas
  • Lars-Erik Wernersson

Summary, in English

We demonstrate a pulse generator based on a GaAs-AlGaAs gated resonant tunneling diode (RTD). This is realized by integrating a third terminal, the gate, into the current path of a RTD. The gate consists of a 200 A thick tungsten grating buried 300 A above the RTD. This implementation allows for control of the current through the RTD. By integrating this device in parallel with an on-chip inductance, a negative differential resistance (NDR) oscillator is formed. It is demonstrated that by using the gate to change the output conductance of the device, the oscillations may be switched on and off, creating short bursts of RF power. This technique allows for rapid quenching of the oscillator, and hence the ability to generate short pulses at high frequency, enabling impulse radio ultra-wideband communication implementations. The highest demonstrated oscillation frequency is 22 GHz with an output power of -4.1 dBm, and the shortest pulses generated are 1.3 ns. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim


  • Solid State Physics
  • Department of Electrical and Information Technology

Publishing year







Physica Status Solidi C: Current Topics In Solid State Physics, Vol 6, No 6





Document type

Conference paper


John Wiley and Sons


  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering

Conference name

35th International Symposium on Compound Semiconductors

Conference date

2008-09-21 - 2008-09-24

Conference place

Rust, Germany



Research group

  • Nano


  • ISSN: 1610-1634