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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs

Author

  • Cezar Zota
  • Guntrade Roll
  • Lars-Erik Wernersson
  • Erik Lind

Summary, in English

We demonstrate InGaAs multigate MOSFETs, so-called FinFETs. The lateral nanowires constituting the channel in these devices have been formed using selective area regrowth, where the surfaces of the nanowires are crystallographic planes. L-g = 32 nm devices exhibit peak transconductance of 1.8 mS/mu m at V-ds = 0.5 V. We also report on RF characterization of these devices. A small-signal hybrid-p model is developed, which includes both the effect of impact ionization and border traps and shows good fit to measurement data. Simultaneously extracted f(t) and fmax are 280 and 312 GHz, respectively, which are the highest reported values of any III-V multiple-gate MOSFET.

Department/s

  • Department of Electrical and Information Technology
  • NanoLund

Publishing year

2014

Language

English

Pages

4078-4083

Publication/Series

IEEE Transactions on Electron Devices

Volume

61

Issue

12

Document type

Journal article

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • III-V
  • FinFET
  • InGaAs
  • MOSFET
  • MuGFET
  • RF
  • selective regrowth
  • trigate

Status

Published

ISBN/ISSN/Other

  • ISSN: 0018-9383