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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Effects of traps in the gate stack on the small-signal RF response of III-V nanowire MOSFETs

Author

  • Markus Hellenbrand
  • Erik Lind
  • Olli-Pekka Kilpi
  • Lars-Erik Wernersson

Summary, in English

We present a detailed study of the effect of gate-oxide-related defects (traps) on the small-signal radio frequency (RF) response of III-V nanowire MOSFETs and find that the effects are clearly identifiable in the measured admittance parameters and in important design parameters such as h21 (forward current gain) and MSG (maximum stable gain). We include the identified effects in a small-signal model alongside results from previous investigations of III-V RF MOSFETs and thus provide a comprehensive physical small-signal RF model for this type of transistor, which accurately describes the measured admittance parameters and gains. We verify the physical basis of the model assumptions by calculating the oxide defect density from the measured admittances.

Department/s

  • Department of Electrical and Information Technology
  • Nano Electronics
  • NanoLund

Publishing year

2020

Language

English

Publication/Series

Solid-State Electronics

Volume

171

Document type

Journal article

Publisher

Elsevier

Topic

  • Nano Technology

Keywords

  • Border Traps
  • Gate Oxide Defects
  • Interface Defects
  • III-V
  • MOSFET
  • RF
  • Small-Signal Model

Status

Published

Research group

  • Nano Electronics

ISBN/ISSN/Other

  • ISSN: 0038-1101