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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Reduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors

Author

  • Jiongjiong Mo
  • Erik Lind
  • Guntrade Roll
  • Lars-Erik Wernersson

Summary, in English

Off-state drain leakage current has been investigated for InGaAs-based metal-oxide-semiconductor field-effect transistors with different drain configurations, InGaAs, and InP, respectively. The introduction of an InP drain presents a lower leakage current compared to InGaAs drain devices. From temperature dependent measurements, the leakage current mechanisms have been differentiated, and the role of drain direct band-to-band tunneling, as well as gate-induced drain leakage, has been identified. (C) 2014 AIP Publishing LLC.

Department/s

  • Department of Electrical and Information Technology
  • NanoLund

Publishing year

2014

Language

English

Publication/Series

Applied Physics Letters

Volume

105

Issue

3

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering

Status

Published

ISBN/ISSN/Other

  • ISSN: 0003-6951