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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Effect of Gate Voltage Stress on InGaAs MOSFET with HfO2 or Al2O3 Dielectric

Author

  • Guntrade Roll
  • Jiongjiong Mo
  • Erik Lind
  • Sofia Johansson
  • Lars Erik Wernersson

Summary, in English

InGaAs nMOSFETs with Al2O3 and HfO2 as dielectric are analyzed. The devices with Al 2O3 show a slightly better subthreshold slope. Both high-κ's have an equal transconductance frequency dispersion (gm-f). A reduction of gm-f is reached by scaling the HfO2 thickness. Positive gate stress leads to an increase in threshold voltage and subthreshold slope for all oxides. DC-gmax degradation is related purely to creation or activation of additional border traps during stress. The RF-gmax is not degraded. Similar time constants hint to a relation between the (semi-)stable degradation of DC-gmax and the threshold voltage increase. For the samples with HfO2, the effects of gate-stress induced additional border traps can only be detected at low frequencies. The created or activated defects are most likely located deep in the oxide. For Al2O3, the effect of additional border traps is also measurable at higher frequencies. The defects are created both closer to the Al2O3/InGaAs interface and deeper in the oxide.

Department/s

  • Department of Electrical and Information Technology
  • NanoLund

Publishing year

2016-06-01

Language

English

Pages

112-116

Publication/Series

IEEE Transactions on Device and Materials Reliability

Volume

16

Issue

2

Document type

Journal article

Publisher

Institute of Electrical and Electronics Engineers Inc.

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • AlO
  • HfO
  • InGaAs
  • nMOSFET
  • PBTI

Status

Published

ISBN/ISSN/Other

  • ISSN: 1530-4388