High Frequency InGaAs Nanowire MOSFETs
Summary, in English
We present compact modeling, DC and RF characterization of lateral and vertical nanowire MOSFETs. Lateral tri-gate nanowire devices on InP substrates have demonstrated a maximum gm=2.95 mS/ μm at VDS=0.5 V, and fT/fmax=290/350 GHz. Vertical gate-all-around InAs wires integrated on Si substrates have demonstrated gm=1.35 mS/μm and fT/fmax=100/155 GHz. We also demonstrate a non- parabolic, ballistic charge/current compact model for rectangular nanowire FETs.
- Department of Electrical and Information Technology
2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015
Institute of Electrical and Electronics Engineers Inc.
- Electrical Engineering, Electronic Engineering, Information Engineering
- Indium gallium arsenide
- Millimeter wave transistors
37th IEEE International Symposium on Workload Characterization, IISWC 2015
2015-10-11 - 2015-10-14
New Orleans, United States
- ISBN: 9781479984947