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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Gated tunnel diode in oscillator applications with high frequency tuning

Author

  • Lars-Erik Wernersson
  • Mats Ärlelid
  • Mikael Egard
  • Erik Lind

Summary, in English

A gated tunnel diode has been introduced into a wave-guide oscillator circuit and the gate is used to tune the oscillation frequency and to turn the oscillator on and off. Oscillators with oscillation frequencies in the range of 9-22 GHz with a typical oscillator output power about -20 dBm have been fabricated. We found that the output power remains essentially constant over a gate bias range (about -260 to 200 mV at V-c = 1.0 V in one oscillator), while it rapidly drops to the noise level over a gate bias range of less than 60 mV above or below the threshold, respectively. In the region with constant power, a total frequency tuning of about 30% is achieved. The maximum oscillation frequency. f(max) (osc), of the gated tunnel diode is set by the tunnel diode and the gate-collector capacitance, and does not depend on the gate-emitter capacitance. This oscillator implementation, in particular, eliminates the need for a separate switch in the realisation of oscillator-based ultra-wide band impulse radios. (C) 2009 Elsevier Ltd. All rights reserved.

Department/s

  • Solid State Physics
  • Department of Electrical and Information Technology

Publishing year

2009

Language

English

Pages

292-296

Publication/Series

Solid-State Electronics

Volume

53

Issue

3

Document type

Journal article

Publisher

Elsevier

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Keywords

  • GaAs
  • Tunnel diode
  • Pulse generator
  • VCO

Status

Published

Research group

  • Nano

ISBN/ISSN/Other

  • ISSN: 0038-1101