Your browser has javascript turned off or blocked. This will lead to some parts of our website to not work properly or at all. Turn on javascript for best performance.

The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Low Trap Density in InAs/High-k Nanowire Gate Stacks with Optimized Growth and Doping Conditions

Author

  • Jun Wu
  • Aein Shiri Babadi
  • Daniel Jacobsson
  • Jovana Colvin
  • Sofie Yngman
  • Rainer Timm
  • Erik Lind
  • Lars Erik Wernersson

Summary, in English

In this paper, we correlate the growth of InAs nanowires with the detailed interface trap density (Dit) profile of the vertical wrap-gated InAs/high-k nanowire semiconductor-dielectric gate stack. We also perform the first detailed characterization and optimization of the influence of the in situ doping supplied during the nanowire epitaxial growth on the sequential transistor gate stack quality. Results show that the intrinsic nanowire channels have a significant reduction in Dit as compared to planar references. It is also found that introducing tetraethyltin (TESn) doping during nanowire growth severely degrades the Dit profile. By adopting a high temperature, low V/III ratio tailored growth scheme, the influence of doping is minimized. Finally, characterization using a unique frequency behavior of the nanowire capacitance-voltage (C-V) characteristics reveals a change of the dopant incorporation mechanism as the growth condition is changed.

Department/s

  • Department of Electrical and Information Technology
  • Solid State Physics
  • Synchrotron Radiation Research
  • NanoLund

Publishing year

2016-04-13

Language

English

Pages

2418-2425

Publication/Series

Nano Letters

Volume

16

Issue

4

Document type

Journal article

Publisher

The American Chemical Society (ACS)

Topic

  • Nano Technology

Keywords

  • C-V
  • D, growth, doping, crystalline phase
  • Nanowire

Status

Published

ISBN/ISSN/Other

  • ISSN: 1530-6984