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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Low-frequency noise in vertical InAs nanowire FETs

Author

  • Karl-Magnus Persson
  • Erik Lind
  • Anil Dey
  • Claes Thelander
  • Henrik Sjöland
  • Lars-Erik Wernersson

Summary, in English

This letter presents dc characteristics and low-frequency noise (LFN) measurements on single vertical InAs nanowire MOSFETs with 35-nm gate length and HfO2 high-kappa dielectric. The average normalized transconductance for three devices is 0.16 S/mm, with a subthreshold slope of 130 mV/decade. At 10 Hz, the normalized noise power S-I/I-d(2) measures 7.3 x 10(-7) Hz(-1). Moreover, the material-dependent Hooge's parameter at room temperature is estimated to be 4.2 x 10(-3).

Department/s

  • Department of Electrical and Information Technology
  • Solid State Physics
  • NanoLund
  • ELLIIT: the Linköping-Lund initiative on IT and mobile communication

Publishing year

2010

Language

English

Pages

428-430

Publication/Series

IEEE Electron Device Letters

Volume

31

Issue

5

Document type

Journal article

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Keywords

  • nanowire (NW)
  • InAs
  • FET
  • flicker noise

Status

Published

Research group

  • Nano
  • Digital ASIC
  • Analog RF

ISBN/ISSN/Other

  • ISSN: 0741-3106