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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Improved breakdown voltages for type I InP/InGaAs DHBTs

Author

  • Erik Lind
  • Zach Griffith
  • Mark J. W. Rodwell

Summary, in English

We have investigated the base-collector breakdown voltage of type I InGaAs/InP DHBTs, which is shown to be dominated by band-to-band tunneling in the base-collector grade. By optimizing the grade we obtain a 20% increase in the breakdown voltage compared with traditional grades.

Department/s

  • Department of Electrical and Information Technology
  • Solid State Physics

Publishing year

2008

Language

English

Pages

504-507

Publication/Series

20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008

Document type

Conference paper

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • InP heterojunction bipolar transistor

Conference name

20th International Conference on Indium Phosphide and Related Materials

Conference date

2008-05-25 - 2008-05-29

Conference place

Versailles, France

Status

Published

Research group

  • Nano

ISBN/ISSN/Other

  • ISSN: 1092-8669