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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

InAs nanowire MOSFETs in three-transistor configurations: single balanced RF down-conversion mixers.

Author

  • Martin Berg
  • Karl-Magnus Persson
  • Jun Wu
  • Erik Lind
  • Henrik Sjöland
  • Lars-Erik Wernersson

Summary, in English

Integration of III-V semiconductors on Si substrates allows for the realization of high-performance, low power III-V electronics on the Si-platform. In this work, we demonstrate the implementation of single balanced down-conversion mixer circuits, fabricated using vertically aligned InAs nanowire devices on Si. A thin, highly doped InAs buffer layer has been introduced to reduce the access resistance and serve as a bottom electrode. Low-frequency voltage conversion gain is measured up to 7 dB for a supply voltage of 1.5V. Operation of these mixers extends into the GHz regime with a [Formula: see text] cut-off frequency of 2 GHz, limited by the optical lithography system used. The circuit dc power consumption is measured at 3.9 mW.

Department/s

  • Department of Electrical and Information Technology
  • NanoLund
  • ELLIIT: the Linköping-Lund initiative on IT and mobile communication

Publishing year

2014

Language

English

Publication/Series

Nanotechnology

Volume

25

Issue

48

Document type

Journal article

Publisher

IOP Publishing

Topic

  • Nano Technology

Status

Published

ISBN/ISSN/Other

  • ISSN: 0957-4484