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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

1/f and RTS Noise in InGaAs Nanowire MOSFETs


  • Christian Möhle
  • Cezar Zota
  • Markus Hellenbrand
  • Erik Lind

Summary, in English

Low-frequency noise measurements were performed on high-performance InGaAs nanowire MOSFETs. 1/f noise measurements show number fluctuations, rather than mobility fluctuations, as the dominant noise source. The minimum equivalent input gate voltage noise reported here is 80 μm2μV2/Hz, among the lowest values for III-V FETs, and showing the feasibility of a high-quality, low trap density, high-k gate oxide on InGaAs.


  • Department of Electrical and Information Technology

Publishing year




Document type

Conference paper


  • Nano Technology


  • InGaAs
  • Nanowires
  • 1/f noise
  • RTS noise
  • Elastic tunnelling

Conference name

Conference on Insulating Films on Semiconductors (INFOS)

Conference date

2017-06-27 - 2017-06-30

Conference place

Potsdam, Germany