Your browser has javascript turned off or blocked. This will lead to some parts of our website to not work properly or at all. Turn on javascript for best performance.

The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

1/f and RTS Noise in InGaAs Nanowire MOSFETs

Author

  • Christian Möhle
  • Cezar Zota
  • Markus Hellenbrand
  • Erik Lind

Summary, in English

Low-frequency noise measurements were performed on high-performance InGaAs nanowire MOSFETs. 1/f noise measurements show number fluctuations, rather than mobility fluctuations, as the dominant noise source. The minimum equivalent input gate voltage noise reported here is 80 μm2μV2/Hz, among the lowest values for III-V FETs, and showing the feasibility of a high-quality, low trap density, high-k gate oxide on InGaAs.

Department/s

  • Department of Electrical and Information Technology

Publishing year

2017-06-28

Language

English

Document type

Conference paper

Topic

  • Nano Technology

Keywords

  • InGaAs
  • MOSFETs
  • Nanowires
  • 1/f noise
  • RTS noise
  • Elastic tunnelling

Conference name

Conference on Insulating Films on Semiconductors (INFOS)

Conference date

2017-06-27 - 2017-06-30

Conference place

Potsdam, Germany

Status

Published