Your browser has javascript turned off or blocked. This will lead to some parts of our website to not work properly or at all. Turn on javascript for best performance.

The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

III-V Nanowires-Extending a Narrowing Road

Author

  • Lars-Erik Wernersson
  • Claes Thelander
  • Erik Lind
  • Lars Samuelson

Summary, in English

Semiconductor nanowires have attracted considerable attention during the last decade and are considered as an alternative path to extend the road for scaled semiconductor devices. The interest is motivated by the improved electrostatic control in the cylindrical geometry and the possibility to utilize heterostructures in transistor design. Currently, nanowire transistors have been realized both in III-Vs and in group IV materials employing top-down as well as bottom-up technologies. In this review, we give an overview of the field and, in particular, we summarize state-of-the-art for III-V nanowire devices. It is demonstrated that the growth and processing technologies are maturing and that devices with good transistor characteristics are being fabricated by a combined bottom-up and top-down approach. Also, the first radio-frequency (RF)-implementations are reviewed and discussed.

Department/s

  • Solid State Physics
  • Department of Electrical and Information Technology
  • NanoLund

Publishing year

2010

Language

English

Pages

2047-2060

Publication/Series

Proceedings of the IEEE

Volume

98

Issue

12

Document type

Journal article

Publisher

IEEE Press

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Keywords

  • nanowire field-effect transistors (FETs)
  • nanotechnology
  • Complementary metal-oxide-semiconductor (CMOS)
  • III-V
  • metal-oxide-semiconductor field-effect transistors (MOSFETs)

Status

Published

Research group

  • Nano

ISBN/ISSN/Other

  • ISSN: 0018-9219