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Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Size-effects in indium gallium arsenide nanowire field-effect transistors

Author

  • Cezar B. Zota
  • E. Lind

Summary, in English

We fabricate and analyze InGaAs nanowire MOSFETs with channel widths down to 18 nm. Low-temperature measurements reveal quantized conductance due to subband splitting, a characteristic of 1D systems. We relate these features to device performance at room-temperature. In particular, the threshold voltage versus nanowire width is explained by direct observation of quantization of the first sub-band, i.e., band gap widening. An analytical effective mass quantum well model is able to describe the observed band structure. The results reveal a compromise between reliability, i.e., VT variability, and on-current, through the mean free path, in the choice of the channel material.

Department/s

  • Department of Electrical and Information Technology
  • NanoLund

Publishing year

2016-08-08

Language

English

Publication/Series

Applied Physics Letters

Volume

109

Issue

6

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Nano Technology

Status

Published

ISBN/ISSN/Other

  • ISSN: 0003-6951