Your browser has javascript turned off or blocked. This will lead to some parts of our website to not work properly or at all. Turn on javascript for best performance.

The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Portrait of Erik Lind; Photo: Kennet Ruona

Erik Lind

Professor, Coordinator Nanoelectronics & Nanophotonics

Portrait of Erik Lind; Photo: Kennet Ruona

Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs

Author

  • Abinaya Krishnaraja
  • Johannes Svensson
  • Elvedin Memisevic
  • Zhongyunshen Zhu
  • Axel R. Persson
  • Erik Lind
  • Lars Reine Wallenberg
  • Lars Erik Wernersson

Summary, in English

Tunnel field-effect transistors (TFETs) are promising candidates that have demonstrated potential for and beyond the 3 nm technology node. One major challenge for the TFETs is to optimize the heterojunction for high drive currents while achieving steep switching. Thus far, such optimization has mainly been addressed theoretically. Here, we experimentally investigate the influence of the source segment composition on the performance for vertical nanowire InAs/InGaAsSb/GaSb TFETs. Compositional analysis using transmission electron microscopy is combined with simulations to interpret the results from electrical characterization data. The results show that subthreshold swing (S) and transconductance (gm) decrease with increasing arsenic composition until the strain due to lattice mismatch increases them both. The role of indium concentration at the junction is also examined. This systematic optimization has rendered sub-40 mV/dec operating TFETs with a record transconductance efficiency gm/ID = 100 V-1, and it shows that different source materials are preferred for various applications.

Department/s

  • Nano Electronics
  • Centre for Analysis and Synthesis
  • NanoLund

Publishing year

2020

Language

English

Pages

2882-2887

Publication/Series

ACS Applied Electronic Materials

Volume

2

Issue

9

Document type

Journal article

Publisher

The American Chemical Society (ACS)

Topic

  • Nano Technology
  • Other Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • GaSb
  • heterojunction
  • InAs
  • InGaAsSb
  • nanowire
  • tunnel FET

Status

Published

Research group

  • Nano Electronics

ISBN/ISSN/Other

  • ISSN: 2637-6113