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Portrait of Heiner Linke; Photo: Kennet Ruona

Heiner Linke

Professor, Deputy dean at Faculty of Engineering, LTH

Portrait of Heiner Linke; Photo: Kennet Ruona

Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors

Author

  • J. G. Gluschke
  • J. Seidl
  • A. M. Burke
  • R. W. Lyttleton
  • D. J. Carrad
  • A. R. Ullah
  • S. Fahlvik
  • S. Lehmann
  • H. Linke
  • A. P. Micolich

Summary, in English

We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trench alignment technique. Top gates were then defined aligned to the bottom gates to form gate-all-around structures. This approach overcomes significant limitations in minimal obtainable gate length and gate-length control in previous horizontal wrap-gated nanowire transistors that arise because the gate is defined by wet-etching. In the method presented here gate-length control is limited by the resolution of the electron-beam-lithography process. We demonstrate the versatility of our approach by fabricating a device with an independent bottom gate, top gate, and gate-all-around structure as well as a device with three independent gate-all-around structures with 300, 200, and 150 nm gate length. Our method enables us to achieve subthreshold swings as low as 38 mV dec-1 at 77 K for a 150 nm gate length.

Department/s

  • Solid State Physics
  • NanoLund

Publishing year

2018

Language

English

Publication/Series

Nanotechnology

Volume

30

Issue

6

Document type

Journal article

Publisher

IOP Publishing

Topic

  • Nano Technology

Keywords

  • field-effect transistor
  • GAA
  • gate-all-around
  • nanowire
  • nanowire alignment

Status

Published

ISBN/ISSN/Other

  • ISSN: 0957-4484