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Portrait of Heiner Linke; Photo: Kennet Ruona

Heiner Linke

Professor, Deputy dean at Faculty of Engineering, LTH

Portrait of Heiner Linke; Photo: Kennet Ruona

InAs Nanowire Transistors with Multiple, Independent Wrap-Gate Segments.

Author

  • Adam Burke
  • D J Carrad
  • J G Gluschke
  • Kristian Storm
  • Sofia Fahlvik Svensson
  • Heiner Linke
  • Lars Samuelson
  • A P Micolich

Summary, in English

We report a method for making horizontal wrap-gate nanowire transistors with up to four independently controllable wrap-gated segments. While the step up to two independent wrap-gates requires a major change in fabrication methodology, a key advantage to this new approach, and the horizontal orientation more generally, is that achieving more than two wrap-gate segments then requires no extra fabrication steps. This is in contrast to the vertical orientation, where a significant subset of the fabrication steps needs to be repeated for each additional gate. We show that cross-talk between adjacent wrap-gate segments is negligible despite separations less than 200 nm. We also demonstrate the ability to make multiple wrap-gate transistors on a single nanowire using the exact same process. The excellent scalability potential of horizontal wrap-gate nanowire transistors makes them highly favorable for the development of advanced nanowire devices and possible integration with vertical wrap-gate nanowire transistors in 3D nanowire network architectures.

Department/s

  • Solid State Physics
  • NanoLund

Publishing year

2015

Language

English

Pages

2836-2843

Publication/Series

Nano Letters

Volume

15

Issue

5

Document type

Journal article

Publisher

The American Chemical Society (ACS)

Topic

  • Nano Technology

Status

Published

ISBN/ISSN/Other

  • ISSN: 1530-6992