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Portrait of Heiner Linke; Photo: Kennet Ruona

Heiner Linke

Professor, Deputy dean at Faculty of Engineering, LTH

Portrait of Heiner Linke; Photo: Kennet Ruona

Fully tunable, non-invasive thermal biasing of gated nanostructures suitable for low-temperature studies.

Author

  • Jan-Göran Gluschke
  • Sofia Fahlvik Svensson
  • Claes Thelander
  • Heiner Linke

Summary, in English

There is much recent interest in the thermoelectric (TE) characterization of single nanostructures at low temperatures, because such measurements yield information that is complementary to traditional conductance measurements, and because they may lead to novel paradigms for TE energy conversion. However, previously reported techniques for thermal biasing of nanostructures are difficult to use at low temperatures because of unintended global device heating, the lack of ability to continuously tune the thermal bias, or limited compatibility with gating techniques. By placing a heater directly on top of the electrical contact to a single InAs nanowire, we demonstrate fully tunable thermal biases of up to several tens of Kelvin, combined with negligible overall heating of the device, and with full functionality of a back gate, in the temperature range between 4 K and 300 K.

Department/s

  • Solid State Physics
  • NanoLund

Publishing year

2014

Language

English

Publication/Series

Nanotechnology

Volume

25

Issue

38

Document type

Journal article

Publisher

IOP Publishing

Topic

  • Nano Technology

Status

Published

Research group

  • Nanometer structure consortium (nmC)

ISBN/ISSN/Other

  • ISSN: 0957-4484