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Portrait of Ivan Maximov. Photo: Kennet Ruona

Ivan Maximov

Associate Professor, Coordinator Exploratory Nanotechnology

Portrait of Ivan Maximov. Photo: Kennet Ruona

Nonlinear electrical properties of Si three-terminal junction devices

Author

  • Fantao Meng
  • Jie Sun
  • Mariusz Graczyk
  • Kailiang Zhang
  • Mika Prunnila
  • Jouni Ahopelto
  • Peixiong Shi
  • Jinkui Chu
  • Ivan Maximov
  • Hongqi Xu

Summary, in English

This letter reports on the realization and characterization of silicon three-terminal junction devices made in a silicon-on-insulator wafer. Room temperature electrical measurements show that the fabricated devices exhibit pronounced nonlinear electrical properties inherent to ballistic electron transport in a three-terminal ballistic junction (TBJ) device. The results show that room temperature functional TBJ devices can be realized in a semiconductor material other than high-mobility III-V semiconductor heterostructures and provide a simple design principle for compact silicon devices in nanoelectronics. (C) 2010 American Institute of Physics. [doi:10.1063/1.3526725]

Department/s

  • Solid State Physics

Publishing year

2010

Language

English

Publication/Series

Applied Physics Letters

Volume

97

Issue

24

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Condensed Matter Physics

Status

Published

ISBN/ISSN/Other

  • ISSN: 0003-6951