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Portrait of Ivan Maximov. Photo: Kennet Ruona

Ivan Maximov

Associate Professor, Coordinator Exploratory Nanotechnology

Portrait of Ivan Maximov. Photo: Kennet Ruona

New high resolution negative resist mr-L 6000.1 XP for electron beam and nanoimprint lithography

Author

  • Ivan Maximov
  • Marc Beck
  • Patrick Carlberg
  • Lars Montelius
  • K. Pfeiffer
  • F. Reuther
  • G. Gruetzer
  • H. Schulz
  • M. Wissen
  • H.-C. Scheer

Summary, in English

We present the characterization results of a new high resolution negative electron beam resist mr-L 6000.1 XP. The resist can also be used as imprintable polymer in nanoimprint lithography with sub-100 nm resolution. The feature size achieved after e-beam exposure was about 50 nm with sensitivity of 2-4 μC/cm<sup>2</sup>. Studies of the resist properties as a function of chemical composition and development conditions are also presented

Department/s

  • Solid State Physics

Publishing year

2002

Language

English

Publication/Series

7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science

Document type

Conference paper

Publisher

Lund University

Topic

  • Condensed Matter Physics

Keywords

  • nanoimprint lithography
  • high resolution negative resist mr-L 6000.1 XP
  • electron beam lithography
  • imprintable polymer
  • electron beam resolution
  • 50 nm
  • sensitivity
  • chemical composition
  • electron beam exposure

Conference name

Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)

Conference date

2002-06-24 - 2002-06-28

Conference place

Malmö, Sweden

Status

Published