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Portrait of Ivan Maximov. Photo: Kennet Ruona

Ivan Maximov

Associate Professor, Coordinator Exploratory Nanotechnology

Portrait of Ivan Maximov. Photo: Kennet Ruona

A novel device principle for nanoelectronics

Author

  • Hongqi Xu
  • Ivan Shorubalko
  • Ivan Maximov
  • Werner Seifert
  • Pär Omling
  • Lars Samuelson

Summary, in English

We report on the results of our recent theoretical and experimental investigations of a novel, room temperature electrical property of three-terminal ballistic junctions (TBJs). For a symmetric TBJ device, it is found that when finite voltages V-1 and V-r are applied in push-pull fashion, with V-1 = V and V-r = - V. to the left and right branches, the voltage output V-c from the central branch will always be negative. This property is in strong contrast to a symmetric three-terminal device made from conventional diffusive conductors, for which Ohm's law predicts a constant zero output of V-c for all V-1 - V-c.This novel characteristic appears even when the device symmetry is broken, provided that V is greater than the threshold. It is also shown that the TBJ devices show a good parabolic behavior for V-c vs. V in a large range of voltages V.

Department/s

  • Solid State Physics

Publishing year

2002

Language

English

Pages

417-420

Publication/Series

Materials Science and Engineering C: Materials for Biological Applications

Volume

19

Issue

1-2

Document type

Journal article

Publisher

Elsevier

Topic

  • Condensed Matter Physics

Keywords

  • 300 K
  • parabolic behavior
  • Ga<sub>0.25</sub>In<sub>0.75</sub>As-InP
  • voltage
  • novel electrical characteristic
  • symmetric three-terminal device
  • broken device symmetry
  • 2DEG
  • semiconductor QW
  • push-pull fashion
  • symmetric TBJ device
  • three-terminal ballistic junctions
  • nanoelectronics
  • room temperature electrical property

Status

Published

ISBN/ISSN/Other

  • ISSN: 0928-4931