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Portrait of Ivan Maximov. Photo: Kennet Ruona

Ivan Maximov

Associate Professor, Coordinator Exploratory Nanotechnology

Portrait of Ivan Maximov. Photo: Kennet Ruona

Gate-defined quantum devices realized on an InGaAs/InP heterostructure by incorporating a high-kappa dielectric material


  • Jie Sun
  • Marcus Larsson
  • Ivan Maximov
  • Hongqi Xu

Summary, in English

Gate-defined quantum devices in an InGaAs/InP heterostructure are achieved by introducing a HfO2 layer as the gate dielectric. The high-kappa layer is grown by atomic layer deposition and the fabrication process is described in detail. Electrical measurements at low temperature reveal the Coulomb blockade effect. Magnetotransport characterization is also carried out for the devices made from this promising spintronic material and the current peaks are found to shift in spin pairs with the applied B-field perpendicular to the wafer.


  • Solid State Physics

Publishing year







2009 IEEE Nanotechnology Materials and Devices Conference

Document type

Conference paper


IEEE - Institute of Electrical and Electronics Engineers Inc.


  • Condensed Matter Physics


  • High-kappa dielectric
  • InGaAs/InP
  • Quantum devices

Conference name

IEEE Nanotechnology Materials and Devices Conference

Conference date

2009-06-02 - 2009-06-05

Conference place

Traverse City, MI, United States