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Portrait of Ivan Maximov. Photo: Kennet Ruona

Ivan Maximov

Associate Professor, Coordinator Exploratory Nanotechnology

Portrait of Ivan Maximov. Photo: Kennet Ruona

A novel frequency-doubling device based on three-terminal ballistic junction


  • Ivan Shorubalko
  • Hongqi Xu
  • Ivan Maximov
  • D. Nilsson
  • Pär Omling
  • Lars Samuelson
  • Werner Seifert

Summary, in English

Summary form only given. Ballistic devices have received increasing attention for their nonlinear electrical properties, which are interesting from both physics and application points of view. Recently, novel nonlinear electrical properties of three-terminal ballistic junctions (TBJs) have been discovered theoretically and experimentally. In this work we propose and demonstrate functionality of a novel frequency-doubling device based on a three-terminal ballistic junction. The novel devices are fabricated by integrating a T-shaped TBJ and a one-dimensional (1D) lateral-field-effect transistor (lateral-FET) with trench gate-channel insulation on high-electron-mobility GaInAs/InP quantum well structures The results of the measurements show frequency doubling and gain in these novel devices at room temperature


  • Solid State Physics

Publishing year







Device Research Conference (Cat. No.02TH8606)

Document type

Conference paper


IEEE - Institute of Electrical and Electronics Engineers Inc.


  • Condensed Matter Physics


  • GaInAs-InP
  • frequency multiplication
  • room temperature
  • GaInAs/InP quantum well structures
  • high-electron-mobility QW structures
  • trench gate-channel insulation
  • one-dimensional lateral-FET
  • 1D lateral-field-effect transistor
  • T-shaped ballistic junction
  • nonlinear electrical properties
  • frequency-doubling device
  • three-terminal ballistic junction

Conference name

Device Research Conference, 2002

Conference date

2002-06-24 - 2002-06-26

Conference place

Santa Barbara, CA, United States




  • ISBN: 0-7803-7317-0