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Portrait of Ivan Maximov. Photo: Kennet Ruona

Ivan Maximov

Associate Professor, Coordinator Exploratory Nanotechnology

Portrait of Ivan Maximov. Photo: Kennet Ruona

Investigation of polymethylmethacrylate resist residues using photoelectron microscopy

Author

  • Ivan Maximov
  • AA Zakharov
  • Tommy Holmqvist
  • Lars Montelius
  • Ingolf Lindau

Summary, in English

Quantitative photoelectron spectromicroscopy has been used to study polymethylmethacrylate (PMMA) resist residues on SiO2 surfaces after electron beam exposure and resist development, It was found that correctly exposed and developed PMMA leaves residues with an average thickness of about 1 nm. Higher exposure doses result in the decrease in film thickness, but with residues of about 0.5 mn. The technique can be applied as a powerful tool for surface and interface quality control in technology of electronic devices.

Department/s

  • Solid State Physics
  • Engelsk rubrik
  • Synchrotron Radiation Research
  • MAX IV Laboratory

Publishing year

2002

Language

English

Pages

1139-1142

Publication/Series

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Volume

20

Issue

3

Document type

Conference paper

Publisher

American Institute of Physics (AIP)

Topic

  • Physical Sciences
  • Natural Sciences
  • Condensed Matter Physics
  • Atom and Molecular Physics and Optics

Conference name

20th North American Conference on Molecular Beam Epitaxy

Conference date

2001-10-01 - 2001-10-03

Status

Published

ISBN/ISSN/Other

  • ISSN: 1071-1023
  • ISSN: 1520-8567