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Portrait of Ivan Maximov. Photo: Kennet Ruona

Ivan Maximov

Associate Professor, Coordinator Exploratory Nanotechnology

Portrait of Ivan Maximov. Photo: Kennet Ruona

Enhanced Anisotropic Effective g Factors of an Al10.25Ga0.75N/GaN Heterostructure Based Quantum Point Contact

Author

  • Fangchao Lu
  • Ning Tang
  • Shaoyun Huang
  • Marcus Larsson
  • Ivan Maximov
  • Mariusz Graczyk
  • Junxi Duan
  • Sidong Liu
  • Weikun Ge
  • Fujun Xu
  • Bo Shen

Summary, in English

Gate-defined quantum point contacts (QPCs) were fabricated with Al0.25Ga0.75N/GaN heterostructures grown by metal organic chemical Vapor deposition (MOCVD). In the transport study of the Zeeman effect, greatly enhanced effective g factors (g*).were obtained. The in-plane g* is found to be 5.5 +/- 0.6, 4.8 0.4, and 4.2 0.4 for the first to the third subband, respectively. Similarly, the out-of-plane g* is 8.3 0.6, 6.7 0.7, and 5.1 0.7. Increasing g* with the population of odd-numbered spin-splitted subbands are obtabed at 14 T. This portion of increase is assumed to arise from the exchange interaction in one-dimensional systems. A careful analysis shows that not only the exchange interaction but the spin orbit interaction (SOI) in the strongly confined QPC contribunts to the enhancement and anisotropy of g* in different subbands. An approach to distinguish the respective contributions from the SOI and exchange interaction is therefore proposed.

Department/s

  • Solid State Physics
  • NanoLund

Publishing year

2013

Language

English

Pages

4654-4658

Publication/Series

Nano Letters

Volume

13

Issue

10

Document type

Journal article

Publisher

The American Chemical Society (ACS)

Topic

  • Nano Technology

Keywords

  • Quantum point contacts (QPCs)
  • Al0.25Ga0.75N/GaN heterostructures
  • effective g factor
  • spin orbit interaction (SO!)
  • exchange interaction

Status

Published

ISBN/ISSN/Other

  • ISSN: 1530-6992