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Portrait of Ivan Maximov. Photo: Kennet Ruona

Ivan Maximov

Associate Professor, Coordinator Exploratory Nanotechnology

Portrait of Ivan Maximov. Photo: Kennet Ruona

Strong Schottky barrier reduction at Au-catalyst/GaAs-nanowire interfaces by electric dipole formation and Fermi-level unpinning


  • Dmitry Suyatin
  • Vishal Jain
  • Valery A Nebol’sin
  • Johanna Trägårdh
  • Maria Messing
  • Jakob Wagner
  • Olof Persson
  • Rainer Timm
  • Anders Mikkelsen
  • Ivan Maximov
  • Lars Samuelson
  • Håkan Pettersson

Summary, in English

Nanoscale contacts between metals and semiconductors are critical for further downscaling of electronic and optoelectronic devices. However, realizing nanocontacts poses significant challenges since conventional approaches to achieve ohmic contacts through Schottky barrier suppression are often inadequate. Here we report the realization and characterization of low n-type Schottky barriers (~0.35 eV) formed at epitaxial contacts between Au-In alloy catalytic particles and GaAs-nanowires. In comparison to previous studies, our detailed characterization, employing selective electrical contacts defined by high-precision electron beam lithography, reveals the barrier to occur directly and solely at the abrupt interface between the catalyst and nanowire. We attribute this lowest-to-date-reported Schottky barrier to a reduced density of pinning states (~1017 m−2) and the formation of an electric dipole layer at the epitaxial contacts. The insight into the physical mechanisms behind the observed low-energy Schottky barrier may guide future efforts to engineer abrupt nanoscale electrical contacts with tailored electrical properties.


  • Solid State Physics
  • Synchrotron Radiation Research
  • Centre for Analysis and Synthesis
  • NanoLund

Publishing year





Nature Communications



Document type

Journal article


Nature Publishing Group


  • Chemical Sciences
  • Condensed Matter Physics
  • Atom and Molecular Physics and Optics
  • Nano Technology


  • Schottky nanocontact
  • catalytic nanoparticle
  • nanoelectronic device
  • photodetector
  • electron beam lithography
  • high-precision alignment
  • scanning tunneling microscopy




  • ISSN: 2041-1723