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Portrait of Ivan Maximov. Photo: Kennet Ruona

Ivan Maximov

Associate Professor, Coordinator Exploratory Nanotechnology

Portrait of Ivan Maximov. Photo: Kennet Ruona

Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric

Author

  • Jie Sun
  • Marcus Larsson
  • Ivan Maximov
  • Hilde Hardtdegen
  • Hongqi Xu

Summary, in English

Gate-defined quantum dots in an InGaAs/InP heterostructure are realized by incorporating a high-kappa HfO2 material as a gate dielectric using atomic layer deposition. The fabricated quantum-dot devices show Coulomb blockade effect at low temperature. The Coulomb blockade current peaks are found to shift in pairs with the magnetic field applied perpendicular to the quantum-dot plane, due to the filling of electrons into spin-degenerate orbital states. When the magnetic field is applied parallel to the quantum-dot plane, spin splittings of orbital states are observed and the extracted effective g-factors are found to be different for different orbital states.

Department/s

  • Solid State Physics

Publishing year

2009

Language

English

Publication/Series

Applied Physics Letters

Volume

94

Issue

4

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Condensed Matter Physics

Keywords

  • quantum
  • well devices
  • semiconductor quantum dots
  • quantum interference devices
  • nanotechnology
  • indium compounds
  • III-V semiconductors
  • high-k dielectric thin films
  • hafnium compounds
  • g-factor
  • gallium arsenide
  • atomic layer deposition
  • Coulomb blockade

Status

Published

ISBN/ISSN/Other

  • ISSN: 0003-6951