Your browser has javascript turned off or blocked. This will lead to some parts of our website to not work properly or at all. Turn on javascript for best performance.

The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Portrait of Ivan Maximov. Photo: Kennet Ruona

Ivan Maximov

Associate Professor, Coordinator Exploratory Nanotechnology

Portrait of Ivan Maximov. Photo: Kennet Ruona

Nanoimprint technology for fabrication of three-terminal ballistic junction devices in GaInAs/InP

Author

  • Ivan Maximov
  • Patrick Carlberg
  • Ivan Shorubalko
  • Daniel Wallin
  • Eva-Lena Sarwe
  • Marc Beck
  • Mariusz Graczyk
  • Werner Seifert
  • Hongqi Xu
  • Lars Montelius
  • Lars Samuelson

Summary, in English

We present processing technology based on nanoimprint lithography (NIL) and wet etching for fabrication of GaInAs/InP three-terminal ballistic junction (TBJ) devices. To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO2/Si stamps made with electron beam lithography and reactive ion etching. After the NIL, the resist residues are removed in oxygen plasma followed by wet etching of GaInAs/InP to define the M-structures. Fabricated TBJ-devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics of the TBJ structures are demonstrated and compared with E-beam defined devices. (C) 2003 Elsevier Science B.V. All rights reserved.

Department/s

  • Solid State Physics

Publishing year

2003

Language

English

Pages

196-202

Publication/Series

Microelectronic Engineering

Volume

67-8

Document type

Journal article

Publisher

Elsevier

Topic

  • Condensed Matter Physics

Keywords

  • nanoimprint lithography
  • GaInAs/InP
  • three-terminal ballistic junction

Status

Published

ISBN/ISSN/Other

  • ISSN: 1873-5568