Your browser has javascript turned off or blocked. This will lead to some parts of our website to not work properly or at all. Turn on javascript for best performance.

The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Portrait of Ivan Maximov. Photo: Kennet Ruona

Ivan Maximov

Associate Professor, Coordinator Exploratory Nanotechnology

Portrait of Ivan Maximov. Photo: Kennet Ruona

Novel nanoelectronic device applications based on the nonlinearity of three-terminal ballistic junctions

Author

  • Jie Sun
  • Daniel Wallin
  • Patrik Brusheim
  • Ivan Maximov
  • Z. G. Wang
  • Hongqi Xu

Summary, in English

Nanometer-scale electron devices containing three-terminal ballistic junctions are fabricated by electron-beam lithography on InP/InGaAs two-dimensional electron gas materials. Based on the intrinsic nonlinearity of the devices, frequency mixer, phase detector and RS flip-flop memory functioning at room temperature are successfully achieved. The devices have simple structure layout and small size, and are expected to function at high speed.

Department/s

  • Solid State Physics

Publishing year

2007

Language

English

Pages

1471-1472

Publication/Series

Physics of Semiconductors, Pts A and B

Volume

893

Document type

Conference paper

Publisher

American Institute of Physics (AIP)

Topic

  • Condensed Matter Physics

Keywords

  • frequency mixer
  • three-terminal ballistic junctions
  • flip-flop memory
  • phase detector
  • RS

Conference name

28th International Conference on the Physics of Semiconductors (ICPS-28)

Conference date

2006-07-24 - 2006-07-28

Conference place

Vienna, Austria

Status

Published

ISBN/ISSN/Other

  • ISSN: 0094-243X
  • ISSN: 1551-7616