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Portrait of Ivan Maximov. Photo: Kennet Ruona

Ivan Maximov

Associate Professor, Coordinator Exploratory Nanotechnology

Portrait of Ivan Maximov. Photo: Kennet Ruona

Novel nanoelectronic triodes and logic devices with TBJs

Author

  • Hongqi Xu
  • Ivan Shorubalko
  • Daniel Wallin
  • Ivan Maximov
  • Pär Omling
  • Lars Samuelson
  • Werner Seifert

Summary, in English

In this letter, we demonstrate the realization of novel diodes, triodes, and logic gates with three-terminal ballistic junctions (TBJs) made from a semiconductor heterostructure. The approach exploits the ballistic nature of electron transport, which has emerged in the nanostructures. Importantly, we show that TBJs function as logic AND gates and can be used to construct other compound logic gates, such as NAND gates with voltage gain, when combined with a point contact (an inverter). The demonstrated devices show favorable characteristics such as low turn-on voltage in rectification and room-temperature operation.

Department/s

  • Solid State Physics

Publishing year

2004

Language

English

Pages

164-166

Publication/Series

IEEE Electron Device Letters

Volume

25

Issue

4

Document type

Journal article

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Condensed Matter Physics

Keywords

  • ballistic devices
  • logic gates
  • nanoelectronics
  • ballistic junctions (TBJs)
  • three-terminal
  • diodes
  • triodes

Status

Published

ISBN/ISSN/Other

  • ISSN: 0741-3106